Dual N-Channel 20-V (D-S) MOSFET

Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed

MOSFET

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON3816/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. AON3816 and AO3816L are electrica

Circuit Playground Bolt-On Kit

文件：471.16 Kbytes Page：2 Pages

20V N-Channel MOSFET

文件：374.69 Kbytes Page：5 Pages

2횞15W Filterless Low EMI Stereo Class D Audio Power Amplifier

文件：438.5 Kbytes Page：9 Pages