丝印代码：AMC1202；AMC1202 Precision, 짹50-mV Input, Basic Isolated Amplifier

文件：1.99965 Mbytes Page：32 Pages

±50mV 输入精密基本隔离放大器

AMC1202 是一款隔离式精密放大器，此放大器的输出与输入电路由抗电磁干扰性能极强的隔离层隔开。该隔离栅经认证可提供高达 3kVRMS 的基本电隔离，符合 VDE V 0884-11 和 UL1577 标准，并且可支持最高 1 kVRMS 的工作电压。\n\n该隔离栅可将系统中以不同共模电压电平运行的各器件隔开，并保护电压较低的器件免受高电压冲击。\n\n AMC1202 的输入针对直接连接低阻抗分流电阻器或其他具有低信号电平的低阻抗电压源的情况进行了优化。出色的直流精度和低温漂支持在 –40°C 至 +125°C 的整个汽车温度范围内，在 PFC 级、直流/直流转换器、牵引逆变器和 OBC • ±50mV 输入电压范围，针对使用分流电阻器测量电流进行了优化\n• 低直流误差： \n• 温漂：±0.8µV/°C（最大值）\n• 增益漂移：±35ppm/°C（最大值）\n• 高侧和低侧以 3.3V 或 5V 电压运行\n• 高 CMTI：100kV/µs（最小值）\n• 安全相关认证： \n• 符合 UL1577 标准且长达 1 分钟的 3000VRMS 隔离;

AMC1202 Precision, 짹50-mV Input, Basic Isolated Amplifier

文件：1.99965 Mbytes Page：32 Pages

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N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Transmissive Optical Sensor with Phototransistor Output

Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Features ● Compact construction ● No setting efforts ● Polyc

Battery power unit

文件：123.15 Kbytes Page：24 Pages

Battery power unit

文件：123.15 Kbytes Page：24 Pages