Cascadable Amplifier 10 to 500MHz

Description The AM-151 amplifier uses a coupler feedback design with high intercept and compression points. The use of coupler feedback minimized noise figure and DC current in a high intercept amplifier. This amplifier is packaged a TO-8 package. Due to the internal power dissipation, the therma

Cascadable Amplifier 5 to 500 MHz

Description The AM-151 amplifier uses a coupler feedback design with high intercept and compression points. The use of coupler feedback minimized noise figure and DC current in a high intercept amplifier. This amplifier is packaged a TO-8 package. Due to the internal power dissipation, the therma

Cascadable Amplifier 10 to 500MHz

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Cascadable Amplifier 10 to 500MHz

Description The AM-151 amplifier uses a coupler feedback design with high intercept and compression points. The use of coupler feedback minimized noise figure and DC current in a high intercept amplifier. This amplifier is packaged a TO-8 package. Due to the internal power dissipation, the therma

Cascadable Amplifier 5 to 500 MHz

Description The AM-151 amplifier uses a coupler feedback design with high intercept and compression points. The use of coupler feedback minimized noise figure and DC current in a high intercept amplifier. This amplifier is packaged a TO-8 package. Due to the internal power dissipation, the therma

(non-RoHS) Cascadable, Hi Dyn Rge

The AM-151-SMA Connectorizer amplifier uses a coupler feedback design with high intercept and compression points. The use of coupler feedback minimized noise figure and DC current in a high intercept amplifier. This amplifier is packaged a TO-8 package. Due to the internal power dissipation, the the ·Noise Figure: 5 dB (Typ.)\n·+21 dBm (Typ.)\n·HIgh Third Order IP.: +38 dBM (Typ.);

Cascadable Thin Film Amplifier, 12 dB Gain, 5 - 500 MHz

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DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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