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位置：首页 > IC中文资料第5635页 > AM82731

型号 功能描述 生产厂家 企业 LOGO 操作
AM82731

NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

ASI

AM82731

NPN RF POWER TRANSISTOR

ETC

知名厂家

AM82731-001

NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731-001 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

ASI

AM82731-003

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 10:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT IMPEDANCE MATCHING ■

STMICROELECTRONICS

意法半导体

AM82731-006

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT IMPEDANCE MATCHING ■

STMICROELECTRONICS

意法半导体

AM82731-012

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ META

STMICROELECTRONICS

意法半导体

AM82731-012

NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731-012 is a Common Base Device Designed for Pulsed S-Band Pulse output and driver Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

ASI

AM82731-025

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-025 device is a high power silicon bipolar NPNtransistor specifically designed forS-Band radar pulsed output and driver applications. ■ LOW PARASITIC, DOUBLE LEVEL METAL DESIGN ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 3:1 VSWR @ 1 dB OVERDRIVE ■ LOW

STMICROELECTRONICS

意法半导体

AM82731-050

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE ■ LOW THERMAL RESISTANCE ■ INPUT/OUT

STMICROELECTRONICS

意法半导体

AM82731-050

NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731-050 is a Common Base Device Designed for Pulsed S-Band Pulse output and driver Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

ASI

AM82731-003

NPN RF POWER TRANSISTOR

ETC

知名厂家

AM82731-003

S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

STMICROELECTRONICS

意法半导体

AM82731-003

NPN RF POWER TRANSISTOR

文件：65.29 Kbytes Page：1 Pages

ASI

B82731

Chokes for Power Lines D Core Chokes

Chokes for Power Lines D Core Chokes Rated voltage 250 Vac Rated current 0,35 to 4,6 A Rated inductance 3,3 to 100 mH Features ■Coil former flame-retardant as per UL 94 V-0 ■Recycleable owing to omission of encapsulation and glue ■High resonance frequency due to 2-sectio

EPCOS

爱普科斯

82731

VIDEO INTERFACE CONTROLLER

文件：1.08737 Mbytes Page：19 Pages

Intel

英特尔

B82731

D Core Chokes B82731M for Power Lines

文件：81.02 Kbytes Page：2 Pages

EPCOS

爱普科斯

B82731H

Power line chokes

文件：159.33 Kbytes Page：6 Pages

EPCOS

爱普科斯

AM82731产品属性

  • 类型

    描述

  • 型号

    AM82731

  • 制造商

    ASI

  • 制造商全称

    ASI

  • 功能描述

    NPN RF POWER TRANSISTOR

AM82731供应商更多...

更新时间：2025-10-6 16:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市恒达亿科技有限公司
AM82801IUX
INTEL
25+
BGA
3200
全新原装、诚信经营、公司现货销售!
询价
深圳市中联芯电子有限公司
AM82801IUX
INTEL(英特尔)
24+
6000
全新原厂原装正品现货,低价出售,实单可谈
询价
深圳市赛特兴科技有限公司
AM82731
ST
23+
高频管
16900
正规渠道,只有原装!
询价
深圳市诺美思科技有限公司
AM82801IUX
INTEL
原厂封装
9800
原装进口公司现货假一赔百
询价
齐创科技(上海,北京,青岛)有限公司
AM82801IUX(SLB8N)
INTEL
23+
BGA
5000
原装正品,假一罚十
询价
深圳诚思涵科技有限公司
AM82801IUM
AMD
16+
QFP
2500
进口原装现货/价格优势!
询价
艾睿（深圳）半导体有限公司
AM82801IUX
INTEL
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
万三科技(深圳)有限公司
AM8280
ACTIONS
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
深圳市威雅利发展有限公司
AM82801IUX
INTEL
1038+
BGA
39
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市欧立现代科技有限公司
AM82801IUX
INTEL
24+
BGA
3500
原装现货,可开13%税票
询价

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