NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

NPN RF POWER TRANSISTOR

NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731-001 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 10:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT IMPEDANCE MATCHING ■

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT IMPEDANCE MATCHING ■

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ LOW THERMAL RESISTANCE ■ INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY ■ META

NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731-012 is a Common Base Device Designed for Pulsed S-Band Pulse output and driver Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-025 device is a high power silicon bipolar NPNtransistor specifically designed forS-Band radar pulsed output and driver applications. ■ LOW PARASITIC, DOUBLE LEVEL METAL DESIGN ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ 3:1 VSWR @ 1 dB OVERDRIVE ■ LOW

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

DESCRIPTION The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. ■ REFRACTORY/GOLD METALLIZATION ■ EMITTER SITE BALLASTED ■ RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE ■ LOW THERMAL RESISTANCE ■ INPUT/OUT

NPN RF POWER TRANSISTOR

DESCRIPTION: The AM82731-050 is a Common Base Device Designed for Pulsed S-Band Pulse output and driver Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

NPN RF POWER TRANSISTOR

S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

NPN RF POWER TRANSISTOR

文件：65.29 Kbytes Page：1 Pages

Chokes for Power Lines D Core Chokes

Chokes for Power Lines D Core Chokes Rated voltage 250 Vac Rated current 0,35 to 4,6 A Rated inductance 3,3 to 100 mH Features ■Coil former flame-retardant as per UL 94 V-0 ■Recycleable owing to omission of encapsulation and glue ■High resonance frequency due to 2-sectio

VIDEO INTERFACE CONTROLLER

文件：1.08737 Mbytes Page：19 Pages

D Core Chokes B82731M for Power Lines

文件：81.02 Kbytes Page：2 Pages

Power line chokes

文件：159.33 Kbytes Page：6 Pages