Silicon Miniature Single-Phase Bridge

Voltage: 50- 1000 Volts Current: 1.0- 1.5 Amp Features Ratings to 1000V PRV Surge overloadrating- 30/50 amperes peak Ideal for printed circuit board Reliable constructionutilizing moldedplastic Mounting position:Any

1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 1.5 Amperes FEATURES • Ratings to 1000V PRV • Surge overload rating: 50 Amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Mounting position:Any

1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE

VOLTAGE -50 to 1000 Volts CURRENT -1.0~1.5 Amperes FEA TURES ● Ratings to 1000V PRV ● Surge overload rating—30/50 amperes peak ● Ideal for printed circuit board ● Reliable construction utilizing molded plastic ● Mounting position: Any

AM158 - 二极管 桥式整流, 单相, 800 V, 1.5 A, 1 V, 4 引脚

The AM158 is a 4-pin single-phase through-hole Bridge Rectifier Diode features a reliable construction utilizing moulded plastic technique. It has lead solderable per MIL-STD-202, Method 208 terminals ideal for printed circuit board. It can be mounted in any position. ·1000V PRV Rating\n·30/50A Peak surge overload rating\n·35V Maximum RMS bridge input voltage\n·-55 to 125°C Operating temperature range;

1.5 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES

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Silicon Miniature Single-Phase Bridge

Features: • Ratings to 1000V PRV • Surge overloadrating - 30/50 amperes peak • Ideal for printed circuited board • Reliable construction utilizing molded plastic • Mounting position: Any

封装/外壳：BNC 单排模块 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：158.79 MHZ CRYSTAL FILTER 滤波器 单片晶体

N & P-Channel 80-V (D-S) MOSFET

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封装/外壳：10-SMD 模块 包装：盒 描述：1230 MHZ / 1585 MHZ CERAMIC DUPL RF/IF，射频/中频和 RFID 射频多路复用器

1230 MHz / 1585 MHz Ceramic Duplexer

1587.5 MHz Ceramic Band Pass Filter

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

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