300 Watts - 50 Volts, 100us, 10 Radar 1200 1400 MHz

GENERAL DESCRIPTION The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifi

封装/外壳：55KT 包装：散装 描述：RF TRANS NPN 50V 1.4GHZ 55KT 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

300 Watts - 40 Volts, 150ms, 10 Radar 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specif

300 Watts - 40 Volts, 150關s, 10 Radar 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specif

300 Watts - 50 Volts, 330關s, 10 Radar 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214-300V is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at three hundred thirty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is spe

RF/Microwave Si BJT Power Devices & Pallets

封装/外壳：55ST 包装：散装 描述：RF TRANS NPN 50V 1.4GHZ 55ST 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • Common Base • PG = 6.5 db at 325 W/1400 MHz • Omnigold™ Metalization System