CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175 °C • IDDC = 54 A at TC = 25°C • RDS(on) = 40 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowes

OptiMOS ™ IPOL 单输出同步降压稳压器 40 A，具有引脚可编程性和 SVID 接口

CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 61 A at TC = 25°C • RDS(on) = 40 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest dev

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 55 A at TC = 25°C • RDS(on) = 40 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 55 A at TC = 25°C • RDS(on) = 40 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 55 A at Tvj = 25°C • RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca