丝印代码：ADS807E；12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES SPURIOUS-FREE DYNAMIC RANGE: 82dB at 10MHz fIN HIGH SNR: 67.5dB (2Vp-p), 69dB (3Vp-p) LOW POWER: 335mW INTERNAL OR EXTERNAL REFERENCE LOW DNL: 0.5LSB FLEXIBLE INPUT RANGE: 2Vp-p to 3Vp-p SSOP-28 PACKAGE APPLICATIONS COMMUNICATIONS IF PROCESSING COMMUNICATIONS BASESTATIONS TE

丝印代码：ADS807E；12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES SPURIOUS-FREE DYNAMIC RANGE: 82dB at 10MHz fIN HIGH SNR: 67.5dB (2Vp-p), 69dB (3Vp-p) LOW POWER: 335mW INTERNAL OR EXTERNAL REFERENCE LOW DNL: 0.5LSB FLEXIBLE INPUT RANGE: 2Vp-p to 3Vp-p SSOP-28 PACKAGE APPLICATIONS COMMUNICATIONS IF PROCESSING COMMUNICATIONS BASESTATIONS TE

丝印代码：ADS807E；12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES SPURIOUS-FREE DYNAMIC RANGE: 82dB at 10MHz fIN HIGH SNR: 67.5dB (2Vp-p), 69dB (3Vp-p) LOW POWER: 335mW INTERNAL OR EXTERNAL REFERENCE LOW DNL: 0.5LSB FLEXIBLE INPUT RANGE: 2Vp-p to 3Vp-p SSOP-28 PACKAGE APPLICATIONS COMMUNICATIONS IF PROCESSING COMMUNICATIONS BASESTATIONS TE

丝印代码：ADS807E；12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES SPURIOUS-FREE DYNAMIC RANGE: 82dB at 10MHz fIN HIGH SNR: 67.5dB (2Vp-p), 69dB (3Vp-p) LOW POWER: 335mW INTERNAL OR EXTERNAL REFERENCE LOW DNL: 0.5LSB FLEXIBLE INPUT RANGE: 2Vp-p to 3Vp-p SSOP-28 PACKAGE APPLICATIONS COMMUNICATIONS IF PROCESSING COMMUNICATIONS BASESTATIONS TE

丝印代码：ADS807E；12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES SPURIOUS-FREE DYNAMIC RANGE: 82dB at 10MHz fIN HIGH SNR: 67.5dB (2Vp-p), 69dB (3Vp-p) LOW POWER: 335mW INTERNAL OR EXTERNAL REFERENCE LOW DNL: 0.5LSB FLEXIBLE INPUT RANGE: 2Vp-p to 3Vp-p SSOP-28 PACKAGE APPLICATIONS COMMUNICATIONS IF PROCESSING COMMUNICATIONS BASESTATIONS TE

丝印代码：ADS807E；12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

FEATURES SPURIOUS-FREE DYNAMIC RANGE: 82dB at 10MHz fIN HIGH SNR: 67.5dB (2Vp-p), 69dB (3Vp-p) LOW POWER: 335mW INTERNAL OR EXTERNAL REFERENCE LOW DNL: 0.5LSB FLEXIBLE INPUT RANGE: 2Vp-p to 3Vp-p SSOP-28 PACKAGE APPLICATIONS COMMUNICATIONS IF PROCESSING COMMUNICATIONS BASESTATIONS TE

封装/外壳：28-SSOP（0.209"，5.30mm 宽） 包装：管件 描述：IC ADC 12BIT PIPELINED 28SSOP 集成电路（IC） 模数转换器（ADC）

ANALOG-TO-DIGITAL CONVERTER

文件：859.32 Kbytes Page：21 Pages

12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

文件：288.5 Kbytes Page：17 Pages

12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

文件：225.82 Kbytes Page：15 Pages

12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

文件：857.9 Kbytes Page：22 Pages

ANALOG-TO-DIGITAL CONVERTER

文件：859.32 Kbytes Page：21 Pages

ANALOG-TO-DIGITAL CONVERTER

文件：859.32 Kbytes Page：21 Pages

封装/外壳：28-SSOP（0.209"，5.30mm 宽） 包装：卷带（TR） 描述：IC ADC 12BIT PIPELINED 28SSOP 集成电路（IC） 模数转换器（ADC）

12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

文件：857.9 Kbytes Page：22 Pages

12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

文件：857.9 Kbytes Page：22 Pages

12-Bit, 53MHz Sampling ANALOG-TO-DIGITAL CONVERTER

文件：857.9 Kbytes Page：22 Pages

ANALOG-TO-DIGITAL CONVERTER

文件：859.32 Kbytes Page：21 Pages

ANALOG-TO-DIGITAL CONVERTER

文件：859.32 Kbytes Page：21 Pages

ANALOG-TO-DIGITAL CONVERTER

文件：859.32 Kbytes Page：21 Pages

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

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Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

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FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)