采用TSOT封装的微功耗、LDO精密基准电压源（1.25 V输出）

ADR121/ADR125/ADR127属于微功耗、高精度、串联模式、带隙基准电压源系列，具有吸电流和源电流能力。这些器件具有高精度和低功耗特性，采用小型封装。ADR12x采用温度漂移曲率校正专利设计技术，可以将输出电压与温度特性关系曲线的非线性度降至低点。\n\n ADR12x是一款低压差(LDO)基准电压源，输入端电压只需高出标称输出电压300 mV (ADR121/ADR125)或1.45 V (ADR127)，便可提供稳定的输出电压。这种低压差性能连同85 μA的低工作电流特性，使ADR12x成为电池供电应用的理想选择。\n\n ADR121/ADR125/ADR1 • 初始精度 \nA 级: ±0.24% \nB 级: ±0.12% \n\n• 最大温度系数 \nA 级: 25 ppm/°C \nB 级: 9 ppm/°C \n\n• 低压差：300 mV（ADR121、ADR125）\n\n• 高输出电流：+5 mA/−2 mA;

Precision, Micropower LDO Voltage References in TSOT

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Precision, Micropower LDO Voltage References in TSOT

文件：604.09 Kbytes Page：20 Pages

Precision, Micropower LDO Voltage References in TSOT

文件：604.09 Kbytes Page：20 Pages

Precision, Micropower LDO Voltage References in TSOT

文件：614.72 Kbytes Page：20 Pages

Precision, Micropower LDO Voltage References in TSOT

文件：604.09 Kbytes Page：20 Pages

Precision, Micropower LDO Voltage References in TSOT

文件：614.72 Kbytes Page：20 Pages

封装/外壳：SOT-23-6 细型，TSOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.24% TSOT6 集成电路（IC） 电压基准

Precision, Micropower LDO Voltage References in TSOT

文件：604.09 Kbytes Page：20 Pages

Precision, Micropower LDO Voltage References in TSOT

文件：604.09 Kbytes Page：20 Pages

Precision, Micropower LDO Voltage References in TSOT

文件：614.72 Kbytes Page：20 Pages

封装/外壳：SOT-23-6 细型，TSOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.12% TSOT6 集成电路（IC） 电压基准

Precision, Micropower LDO Voltage References in TSOT

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PLASTIC SILICON RECTIFIER(VOLTAGE - 1250 to 1600 Volts CURRENT - 1.0 Ampere)

PLASTIC SILICON RECTIFIERS VOLTAGE 1250 to 1600 Volts CURRENT 1.0 Ampere FEATURES • Low forward voltage drop • High current capability • High reliability • High surge current capability • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

Germanium PNP Transistor Horizontal Output Amplifier

Germanium PNP Transistor Horizontal Output Amplifier

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon epitaxial planar type

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