Microprocessor Supervisory Circuits

GENERAL DESCRIPTION The ADM691A/ADM693A/ADM800L/ADM800M family of supervisory circuits offers complete single chip solutions for power supply monitoring and battery control functions in microprocessor systems. These functions include µP reset, backup-battery switchover, watchdog timer, CMOS RAM w

Microprocessor Supervisory Circuits

GENERAL DESCRIPTION The ADM690–ADM695 family of supervisory circuits offers complete single chip solutions for power supply monitoring and battery control functions in microprocessor systems. These functions include µP reset, backup battery switchover, watchdog timer, CMOS RAM write protection, a

Microprocessor Supervisory Circuits

GENERAL DESCRIPTION The ADM691A/ADM693A/ADM800L/ADM800M family of supervisory circuits offers complete single chip solutions for power supply monitoring and battery control functions in microprocessor systems. These functions include µP reset, backup-battery switchover, watchdog timer, CMOS RAM w

Microprocessor Supervisory Circuits

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封装/外壳：16-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC SUPERVISOR 1 CHANNEL 16DIP 集成电路（IC） 监控器

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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