10-Bit, 40 MSPS, 3V, 55.5 mW A/D Converter

文件：914.66 Kbytes Page：19 Pages

ADC10040/ADC10040Q 10-Bit, 40 MSPS, 3V, 55.5 mW A/D Converter

文件：1.26608 Mbytes Page：28 Pages

封装/外壳：28-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC ADC 10BIT PIPELINED 28TSSOP 集成电路（IC） 模数转换器（ADC）

丝印代码：ADC10040CIMT；ADC10040/ADC10040Q 10-Bit, 40 MSPS, 3V, 55.5 mW A/D Converter

1FEATURES 2• Single +3.0V Operation • Selectable 2.0 VP-P, 1.5 VP-P, or 1.0 VP-P full- scale input swing • 400 MHz −3 dB Input Bandwidth • Low Power Consumption • Standby Mode • On-Chip Reference and Sample-and-Hold Amplifier • Offset Binary or Two’s Complement Data Format • Separate Ad

丝印代码：ADC10040CIMT；ADC10040/ADC10040Q 10-Bit, 40 MSPS, 3V, 55.5 mW A/D Converter

1FEATURES 2• Single +3.0V Operation • Selectable 2.0 VP-P, 1.5 VP-P, or 1.0 VP-P full- scale input swing • 400 MHz −3 dB Input Bandwidth • Low Power Consumption • Standby Mode • On-Chip Reference and Sample-and-Hold Amplifier • Offset Binary or Two’s Complement Data Format • Separate Ad

丝印代码：ADC10040CIMT；ADC10040/ADC10040Q 10-Bit, 40 MSPS, 3V, 55.5 mW A/D Converter

1FEATURES 2• Single +3.0V Operation • Selectable 2.0 VP-P, 1.5 VP-P, or 1.0 VP-P full- scale input swing • 400 MHz −3 dB Input Bandwidth • Low Power Consumption • Standby Mode • On-Chip Reference and Sample-and-Hold Amplifier • Offset Binary or Two’s Complement Data Format • Separate Ad

丝印代码：ADC10040CIMT；ADC10040/ADC10040Q 10-Bit, 40 MSPS, 3V, 55.5 mW A/D Converter

1FEATURES 2• Single +3.0V Operation • Selectable 2.0 VP-P, 1.5 VP-P, or 1.0 VP-P full- scale input swing • 400 MHz −3 dB Input Bandwidth • Low Power Consumption • Standby Mode • On-Chip Reference and Sample-and-Hold Amplifier • Offset Binary or Two’s Complement Data Format • Separate Ad

封装/外壳：28-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC ADC 10BIT PIPELINED 28TSSOP 集成电路（IC） 模数转换器（ADC）

55.5 mW A/D Converter

文件：1.26737 Mbytes Page：27 Pages

55.5 mW A/D Converter

文件：1.26737 Mbytes Page：27 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific

SLOTTED SWITCH

INFRARED LED+PHOTO IC APPLICATIONS ● TIMING DETECTION FOR PRINTERS, TYPEWRITERS AND FACSIMILE

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency