Monolithic Synchronous Voltage-to-Frequency Converter

PRODUCT DESCRIPTION The AD652 synchronous voltage-to-frequency converter (SVFC) is a powerful building block for precision analog-to digital conversion, offering typical nonlinearity of 0.002 (0.005 maximum) at a 100 kHz output frequency. The inher ent monotonicity of the transfer function and wi

Monolithic Synchronous Voltage-to-Frequency Converter

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Monolithic Synchronous Voltage-to-Frequency Converter

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SEMICONDUCTORS

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封装/外壳：16-CDIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC V/F CONV 2MHZ 16CERDIP 集成电路（IC） V/F 和 F/V 转换器

Monolithic Synchronous Voltage-to-Frequency Converter

PRODUCT DESCRIPTION The AD652 synchronous voltage-to-frequency converter (SVFC) is a powerful building block for precision analog-to digital conversion, offering typical nonlinearity of 0.002 (0.005 maximum) at a 100 kHz output frequency. The inher ent monotonicity of the transfer function and wi

Monolithic Synchronous Voltage-to-Frequency Converter

PRODUCT DESCRIPTION The AD652 synchronous voltage-to-frequency converter (SVFC) is a powerful building block for precision analog-to digital conversion, offering typical nonlinearity of 0.002 (0.005 maximum) at a 100 kHz output frequency. The inher ent monotonicity of the transfer function and wi

封装/外壳：16-CDIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC V/F CONV 2MHZ 16CERDIP 集成电路（IC） V/F 和 F/V 转换器

Monolithic Synchronous Voltage-to-Frequency Converter

文件：786.39 Kbytes Page：28 Pages

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

Octal bus transceiver/register; 3-state

DESCRIPTION The 74HC/HCT652 are high-speed SI-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with Jedec standard no. 7A. FEATURES • Multiplexed real-time and stored data • Independent register for A and B buses • Independent enab

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

DIFFERENTIAL VARIABLE GAIN AMPLIFIER

DESCRIPTION The TS652 is a differential digitally controled variable gain amplifier featuring a high slew rate of 90V/µs, a large bandwidth, a very low distortion and a very low current and voltage noise. ■ LOW NOISE : 4.6nV/√Hz ■ LOW DISTORTION ■ HIGH SLEW RATE : 90V/µs ■ WIDE BANDWIDTH : 52