Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8202B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

MOSFET

CATV AMPLIFIER MODULE

The RF Line CATV Amplifier Module Description • 24 Vdc Supply, 40 to 870 MHz, CATV Forward Amplifier Features • Specified for 77–, 110– and 128–Channel Loading • Excellent Distortion Performance • Silicon Bipolar Transistor Technology • Unconditionally Stable Under All Load Conditions App

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • 2.5-V Gate drive • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 41 mΩ (typ.) • High forward transfer admittance : |Yfs| = 9 S (typ.) • Low leakage current : IDSS =

500MHz Rail-to-Rail Amplifiers

文件：739.75 Kbytes Page：16 Pages

Switching Type(Self Oscillation Type with Coil)

文件：64.53 Kbytes Page：6 Pages