Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Dual N-Channel Enhancement Mode Field Effect Transistor

Description The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices

Surface Mount High Current Power Inductors

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Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel Enhancement Mode Field Effect Transistor

文件：837.78 Kbytes Page：6 Pages

Dual N-Channel MOSFET uses advanced trench technology

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