丝印代码：A5SHB；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology DMG2305UXQ General Features VDS = -20V ID =-4.9A RDS(ON)

丝印代码：A5SHB；-20V P-Channel Enhancement Mode MOSFET

Description The IRLML2244 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON)

丝印代码：A5SHB；-20V P-Channel Enhancement Mode MOSFET

Description The NTR3A30PZ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON)

丝印代码：A5SHB；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology PMV27UPEA General Features VDS = -20V ID =-4.9A RDS(ON)

丝印代码：A5SHB；P-Channel Enhancement Mode Power MOSFET

General Features VDS = -20V,ID = -4.1A RDS(ON)

丝印代码：A5SHB；-20V P-Channel Enhancement Mode MOSFET

Description The Si2323CDS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON)

丝印代码：A5SHB；P-Channel Enhancement Mode Power MOSFET

Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ■ V DS = -20V, lD = -4.1A RDS(ON)

丝印代码：A5SHB；P-Channel Enhancement Mode Power MOSFET

文件：1.16282 Mbytes Page：3 Pages

丝印代码：A5sHB；P-Channel Enhancement Mode Power MOSFET

文件：1.23589 Mbytes Page：3 Pages

丝印代码：A5SHB；P-Channel Enhancement Mode MOSFET

文件：1.76088 Mbytes Page：5 Pages

丝印代码：A5SHB；-20V P-Channel Enhancement Mode MOSFET

文件：2.58789 Mbytes Page：5 Pages