-20V P-Channel Enhancement Mode MOSFET

Description The NTR3A30PZ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON)

Power MOSFET

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??0 V, ??.9 A, Single P?묬hannel 2.4 x 2.9 x 1.0 mm SOT??3 Package

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单 P 沟道，功率 MOSFET，-20V，-2.9A，38mΩ

Power MOSFET

文件：101 Kbytes Page：6 Pages

??0 V, ??.9 A, Single P?묬hannel 2.4 x 2.9 x 1.0 mm SOT??3 Package

文件：119.76 Kbytes Page：6 Pages

Power MOSFET

文件：101 Kbytes Page：6 Pages

3 AMP SCHOTTKYBARRIER RECTIFIER CHIPS

• 1N5822 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/620 • 3 AMP SCHOTTKYBARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW

3 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N5822 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/620 • 3 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +125°C Storage Temperature: -65°C to +150°C Average Rectified Forward Curre

3 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N5822 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/620 • 3 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED

Power Transducer Series L-UNIT

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Power Transducer Series L-UNIT

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