| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RM2305B | 丝印代码：A5SHB；P-Channel Enhancement Mode Power MOSFET General Features VDS = -20V,ID = -4.1A RDS(ON) | RECTRON 丽正 |   | |
Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16 | NTE | | ||
丝印代码：A5***；P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 1.8 V Rated | VISHAYVishay Siliconix 威世威世科技公司 | | ||
PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications 文件：228.09 Kbytes Page：14 Pages | NSC 国半 | | ||
PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications 文件：228.09 Kbytes Page：14 Pages | NSC 国半 | | ||
PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications 文件：228.09 Kbytes Page：14 Pages | NSC 国半 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
丽正国际 |
21+ |
SOT-23 |
3000 |
只做原装鄙视假货15118075546 |
RM2305B芯片相关品牌
RM2305B规格书下载地址
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2018-12-30
DdatasheetPDF页码索引
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