丝印代码：A5SHB；-20V P-Channel Enhancement Mode MOSFET

Description to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. The uses advanced trench technology DMG2305UXQ General Features VDS = -20V ID =-4.9A RDS(ON)

P-CHANNEL ENHANCEMENT MODE MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：410.5 Kbytes Page：6 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：414.25 Kbytes Page：6 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：410.5 Kbytes Page：6 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：410.5 Kbytes Page：6 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：414.25 Kbytes Page：6 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：414.25 Kbytes Page：6 Pages

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：410.5 Kbytes Page：6 Pages

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

丝印代码：A5***；P-Channel 1.25-W, 1.8-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 1.8 V Rated

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes Page：14 Pages

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes Page：14 Pages

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件：228.09 Kbytes Page：14 Pages