包装：散装 描述：ANT A-BASE 1/4 WAVE RF/IF，射频/中频和 RFID RF 天线

1-4 Pole Rotary Switches

文件：341.27 Kbytes Page：5 Pages

1-4 Pole Rotary Switches

文件：341.27 Kbytes Page：5 Pages

旋转开关

旋转开关

包装：托盘 描述：SWITCH ROTARY 3POS 0.4VA 20V 开关 旋转开关

1-4 Pole Rotary Switches

文件：341.27 Kbytes Page：5 Pages

旋转开关

1-4 Pole Rotary Switches

文件：341.27 Kbytes Page：5 Pages

PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

文件：22.71 Kbytes Page：2 Pages