位置：首页 > IC中文资料第12417页 > A2106ZC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
A2106ZC | 封装/外壳：20-SIP 包装：散装 描述：THYRISTOR 50V/170V 400A 20SIP 电路保护 TVS - 晶闸管 | LITTELFUSE 力特 |   | |
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda | SUTEX | |
A2106ZC产品属性
- 类型
描述
- 型号
A2106ZC
- 功能描述
硅对称二端开关元件 6Chp 50/170V 500A
- RoHS
否
- 制造商
Bourns 转折电流
- VBO
40 V 最大转折电流
- IBO
800 mA
- 不重复通态电流
额定重复关闭状态电压
- VDRM
25 V
- 关闭状态漏泄电流（在VDRM_IDRM下）
保持电流（Ih
- 最大值）
50 mA
- 开启状态电压
5 V 关闭状态电容
- CO
120 pF
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
DO-214AA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RFREESCALE |
1803+ |
N/A |
500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HIROSE/广濑 |
26+ |
NA |
360000 |
只做原装 |
|||
AVID |
25+ |
SOT23-5 |
15000 |
全新原装现货,价格优势 |
|||
MINI |
24+ |
SMD |
3600 |
MINI专营品牌全新原装正品假一赔十 |
|||
SONY |
16+ |
QFP |
607 |
进口原装现货/价格优势! |
|||
158000 |
24+ |
DIP |
6980 |
原装现货,可开13%税票 |
|||
M/A-COM |
24+ |
SMA |
15 |
||||
RFREESCALE |
24+ |
N/A |
5000 |
全新原装正品,现货销售 |
|||
HIROSE/广濑 |
2508+ |
/ |
391805 |
一级代理，原装现货 |
|||
HIROSE/广濑 |
2450+ |
4PIN |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
A2106ZC规格书下载地址
A2106ZC参数引脚图相关
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- A20P16G
- A20P16C
A2106ZC数据表相关新闻
A1-ILBT06
A1-ILBT06
2023-2-7A2T27S020GNR1
全新原装现货 支持第三方机构验证
2023-1-5A3213ELHLT-T
A3213ELHLT-TA3213ELHLT-TA3213ELHLT-TA3213ELHLT-T
2021-2-3A2106V
A2106V，全新原装当天发货或门市自取0755-82732291.
2019-3-3A2106V-11
A2106V-11，全新原装当天发货或门市自取0755-82732291.
2019-3-3A2916-双路全桥PWM电机驱动器
UDN2916B，UDN2916EB，并UDN2916LB电机驱动器设计用于驱动一个双极步进电机绕组或双向控制两个直流电机。这两种桥有能力维持45 V和包括内部脉冲宽度调制（PWM）控制输出电流为750毫安。输出都得到了优化低输出饱和压降（小于1.8伏总源，加上在500毫安接收器）。PWM电流控制，最大输出电流为确定用户的选择参考电压和感应电阻。选择两个逻辑电平输入输出电流限制为0，33，67，或100％的最高水平。每座桥的A相输入决定负载电流方向。桥梁包括接地夹和反激式二极管对感应瞬变保护。内部产生的延误防止交叉电流开关电流方向时。特别上电顺序不是必需的。热保护电路禁用的产出，如果芯片温度超
2012-12-7
DdatasheetPDF页码索引
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