封装/外壳：DO-205AA，DO-8，接线柱 包装：散装 描述：DIODE GEN PURP REV 1KV DO205AA 分立半导体产品 二极管 - 整流器 - 单

DIODE GEN PURP REV 1.2KV DO205AA

封装/外壳：DO-205AA，DO-8，接线柱 包装：散装 描述：DIODE GEN PURP REV 1.4KV DO205AA 分立半导体产品 二极管 - 整流器 - 单

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. • Typical Performance at 400 MHz, 28 V: Output Power — 100 W

General Purpose Silicon Rectifier

Description: The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.

Silicon epitaxial planar type

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