isc Silicon PNP Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications

isc Silicon PNP Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SC4370/4370A ·High transition frequency fT APPLICATIONS ·High voltage applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SC4370/4370A ·High transition frequency fT APPLICATIONS ·High voltage applications

Silicon PNP Power Transistors

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EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTC4370/A.

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTC4370/A.

350mA, 16.5V Input, Low-Dropout Linear Regulators

General Description The MAX1658/MAX1659 linear regulators maximize battery life by combining ultra-low supply currents and low-dropout voltages. They feature Dual Mode™ operation, which presets the output to 3.3V (MAX1658) or 5V (MAX1659), or permits it to be adjusted between 1.25V and 16V. The r

Integrated Circuit Dual AF Preamplifier

Description: The NTE1659 is a monolithic 2–channel preamplifier integrated circuit in a 8–Lead SIP type package suitable for car stereo applications. Features: • Low Noise • Wide Power Supply Voltage Range • Built–In Bias Circuit Reqiuires Fewer External Components • High Open–

12-Bit Rail-to-Rail Micropower DAC in MSOP Package

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