isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage VCEO= -180V(Min) • Complement to Type KTC4370A APPLICATIONS • Designed for high voltage applications

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Transition Frequency ● High Voltage Applications ● Complementary to KTC4370A

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTC4370/A.

General Purpose Transistor, TO-220IS, -180V, -1.5A

• High Transition Frequency : fT=100MHz(typ.)\n• Complementary to KTC4370A.;

TO-220 Bipolar Junction Transistors

Transistor

PNP Transistors

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PNP Transistors

文件：438.09 Kbytes Page：1 Pages

PNP Transistors

文件：438.09 Kbytes Page：1 Pages

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Transition Frequency : fT=100MHz(Typ.). • Complementary to KTC4370/A.

350mA, 16.5V Input, Low-Dropout Linear Regulators

General Description The MAX1658/MAX1659 linear regulators maximize battery life by combining ultra-low supply currents and low-dropout voltages. They feature Dual Mode™ operation, which presets the output to 3.3V (MAX1658) or 5V (MAX1659), or permits it to be adjusted between 1.25V and 16V. The r

Integrated Circuit Dual AF Preamplifier

Description: The NTE1659 is a monolithic 2–channel preamplifier integrated circuit in a 8–Lead SIP type package suitable for car stereo applications. Features: • Low Noise • Wide Power Supply Voltage Range • Built–In Bias Circuit Reqiuires Fewer External Components • High Open–

12-Bit Rail-to-Rail Micropower DAC in MSOP Package

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