isc Silicon PNP Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SC4370/4370A ·High transition frequency fT APPLICATIONS ·High voltage applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SC4370/4370A ·High transition frequency fT APPLICATIONS ·High voltage applications

Silicon PNP Power Transistors

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Space saving design for high density packaging

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IEC Connector C21, for very hot conditions 155, Rewireable, Angled

文件：278.23 Kbytes Page：3 Pages

IEC Appliance Inlet C22, for very hot conditions, Screw-on or Snap-in Mounting, Front Side

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IEC Connector C21, for very hot conditions 155째C, Rewireable, Angled

文件：287.84 Kbytes Page：3 Pages

IEC Connector C21, for very hot conditions 155째C, Rewireable, Angled

文件：288.68 Kbytes Page：3 Pages