丝印代码：CDP0665GB；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

SMD 5.0x3.2 26.0MHz Crystal Unit

Features: Surface Mount Seam Weld Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Description and Applications: Surface mount 5.0mmx3.2mm crystal unit for use in wireless telecommunications devices, especially for a need of ultra miniatu

SWITCHING REGULATOR APPLICATION

文件：350.19 Kbytes Page：8 Pages

Advanced N-Ch Power MOSFET

文件：429.58 Kbytes Page：8 Pages

SWITCHING REGULATOR APPLICATION

文件：389.15 Kbytes Page：8 Pages