9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9A, 600V   N-CHANNEL SUPER-JUNCTION MOSFET

RDS(ON) < 0.75 Ω @ VGS = 10 V, , ID = 5.1 ABy using Super Junction StructureFast SwitchingWith 100% Avalanche Tested ;

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V  N-CHANNEL  SUPER-JUNCTION MOSFET

The UTC 9NM60-S is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. RDS(ON) < 0.64 Ω @ VGS = 10 V, ID = 4.5 ABy using Super Junction StructureFast SwitchingWith 100% Avalanche Tested;

N-Channel 650V (D-S) Power MOSFET

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N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 6.5A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.745Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching