位置：首页 > IC中文资料第2582页 > STP9NM60N
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP9NM60N | iscN-ChannelMOSFETTransistor FEATURES •DrainCurrent–ID=6.5A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.745Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
STP9NM60N | N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
STP9NM60N | N-Channel650V(D-S)PowerMOSFET 文件：1.10767 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh™PowerMOSFET TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFET technologythata | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-Channel650V(D-S)PowerMOSFET 文件：1.10575 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
STP9NM60N产品属性
- 类型
描述
- 型号
STP9NM60N
- 功能描述
MOSFET N-Ch 600V 0.63 Ohm 6.5A MDmesh II PWR
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
22+23+ |
TO-220 |
27091 |
绝对原装正品全新进口深圳现货 |
|||
ST |
TO-220 |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
|||
ST/意法 |
2024+实力库存 |
TO-220 |
2983 |
只做原厂渠道 可追溯货源 |
|||
ST/意法 |
TO-220 |
265209 |
假一罚十,原包原标签,常备现货 |
||||
ST-意法半导体 |
24+25+/26+27+ |
TO-220-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
ST/意法 |
22+/23+ |
TO-220 |
9800 |
原装进口公司现货假一赔百 |
|||
STM原厂目录 |
23+ |
TO-220 |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
|||
ST/意法 |
22+ |
TO-220 |
360000 |
进口原装房间现货实库实数 |
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DdatasheetPDF页码索引
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