N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

N沟道600 V、0.63 Ohm、6.5 A MDmesh(TM) II功率MOSFET，DPAK封装

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

丝印代码：DPAK；isc N-Channel MOSFET Transistor

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N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 6.5A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.745Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching

N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

N-Channel 650V (D-S) Power MOSFET

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