N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

N沟道600 V、0.63 Ohm、6.5 A MDmesh(TM) II功率MOSFET，DPAK封装

isc N-Channel MOSFET Transistor

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N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh™Power MOSFET

TYPICAL RDS(on) = 0.55 Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

N-Channel 650V (D-S) Power MOSFET

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