9.0A, 600V  N-CHANNEL  SUPER-JUNCTION MOSFET

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC converters for power a

N-Channel 650V (D-S) Power MOSFET

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N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh™Power MOSFET

TYPICAL RDS(on) = 0.55 Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that a