MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 4540 pF TYP. • Built-in gate protection diode

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 84A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID = 42 A) RDS(on)3 = 9.4 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low input capacitance Ciss = 6

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID =