包装：散装 描述：B302-7X10-YK-O-CAU-DO NOT ENTER 标签，标志，护栏，标识 标签，贴纸，贴标 - 预印

包装：散装 描述：B302-7X10-YK-O-CAU-DO NOT ENTER 标签，标志，护栏，标识 标签，贴纸，贴标 - 预印

COAXIAL ADAPTER, PC 2.4 - SK, 50 Ohm, jack / jack (female / female)

Properties • Precision inteaces • Excellent electrical performance • Premium base materials and platings

Corrugated, 50 Ohm, 4.9 GHz, 85°C, ø27.5 mm, PE jacket

Properties • Low loss, low IM distortion levels • High power capability • Flame retardant designs available • High shieding eectiveness

Corrugated, 50 Ohm, 5 GHz, 85°C, ø27.9 mm, PE jacket

Properties • Low loss, low IM distortion levels • High power capability • Flame retardant designs available • High shieding eectiveness

COAXIAL CONNECTOR, 7/16, 50 Ohm, Straight cable plug (male)

Properties • Rugged connection for COM-Applications • For medium and high power connection • Applicable in frequencies up to 7.5 GHz • IEC Standardized

COAXIAL CONNECTOR, N, 50 Ohm, Straight cable plug (male)

Properties • Screwed coupling mechanism for sturdy and reliable connection • IP rating (inteace, mated) IP67 • Inteace dimensions according IEC/MIL

COAXIAL CONNECTOR, 7/16, 50 Ohm, Straight panel cable jack (female), flange mount

Properties • Rugged connection for COM-Applications • For medium and high power connection • Applicable in frequencies up to 7.5 GHz • IEC Standardized

We are Dedicated to Achieving Customer Satisfaction Through Continuous Improvement

文件：2.45415 Mbytes Page：164 Pages

RF射频同轴连接器

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. boasts the excellent gain, linearity a

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

PASSIVE DEVICES MNS Capacitors

文件：78.12 Kbytes Page：2 Pages