PASSIVE DEVICES MNS Capacitors

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Silicon Passive Devices

The GC84000 series are silicon chip capacitors and utilize silicon nitride as the dielectric layer. These capacitors are preferred over MOS devices because of their improved reliability and ruggedness. In addition, they exhibit higher capacitance per unit area, resulting in smaller size. Because MNS

PASSIVE DEVICES MNS Capacitors

文件：78.12 Kbytes Page：2 Pages

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. boasts the excellent gain, linearity a

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell