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MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2600 pF TYP.

RENESAS

瑞萨

更新时间:2026-3-11 13:30:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBSEMI/台湾微碧
24+
TO-263
60000
VBsemi
24+
TO263
5000
全新原装正品,现货销售
VBsemi
24+
TO263
9000
只做原装正品 有挂有货 假一赔十
ST
24+
TO-262
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
NEC
23+
SOT-263
33000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择
IR
23+
D2-PAK
69820
终端可以免费供样,支持BOM配单!
VBsemi
24+
TO263
8000
新到现货,只做全新原装正品
VB
25+
TO-263
10000
原装现货假一罚十
NEC
TO-263
22+
6000
十年配单,只做原装

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