位置：首页 > IC中文资料第10778页 > 7N65L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
7N65L | 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 |   | |
7N65L | N-channel power MOS tube Features * VDS (V)=650V * RDS(ON) | UMW 友台半导体 | | |
7N65L | 7.4A, 650V N-CHANNEL POWER MOSFET | UTC 友顺 | | |
N-Channel 650V (D-S) Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction | VBSEMI 微碧半导体 | | ||
7A mps,650 Volts N-CHANNEL MOSFET FEATURE ● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability | CHONGQING 平伟实业 | | ||
7 Amps, 650 Volts 7 Amps, 650 Volts DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in | UTC 友顺 | | ||
650V N-Channel Power MOSFET Features ● RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | | ||
7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET 文件：180.91 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 | | ||
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-HC is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-HC is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
7 Amps, 650 Volts 7 Amps, 650 Volts DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in | UTC 友顺 | | ||
7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-HC is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the | UTC 友顺 | | ||
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10557 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10566 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.15815 Mbytes Page：11 Pages | VBSEMI 微碧半导体 | | ||
7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET 文件：180.91 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：374.04 Kbytes Page：9 Pages | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET 文件：173.56 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET 文件：173.56 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：374.04 Kbytes Page：9 Pages | UTC 友顺 | | ||
7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET 文件：180.91 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10565 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL POWER MOSFET 文件：374.04 Kbytes Page：9 Pages | UTC 友顺 | | ||
7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET 文件：180.91 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET 文件：173.56 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：374.04 Kbytes Page：9 Pages | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET 文件：173.56 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：374.04 Kbytes Page：9 Pages | UTC 友顺 | | ||
7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET 文件：180.91 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET 文件：173.56 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：374.04 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：374.04 Kbytes Page：9 Pages | UTC 友顺 | | ||
7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET 文件：180.91 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4A, 650V N-CHANNEL POWER MOSFET 文件：173.56 Kbytes Page：6 Pages | UTC 友顺 | | ||
7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET 文件：180.91 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：374.04 Kbytes Page：9 Pages | UTC 友顺 | |
7N65L产品属性
- 类型
描述
- 型号
7N65L
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
7.4A, 650V N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HUILIDA/汇利达 |
24+ |
NA/ |
90 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
UTC/友顺 |
25+ |
TO-220F |
32360 |
UTC/友顺全新特价7N65L-TF3-T即刻询购立享优惠#长期有货 |
|||
UTC |
2024+ |
TO-263 |
500000 |
诚信服务,绝对原装原盘 |
|||
UTC |
01+ |
TO-263 |
650 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
UTC(友顺) |
24+/25+ |
TO-252-2 |
2500 |
UTC原厂一级代理商,价格优势! |
|||
UTC |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
UTC |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
友顺 UTC |
23+ |
TO-252 |
76500 |
原装正品，实单请联系 |
|||
23+ |
TO-252 T/R/TO-220F1 |
6000 |
全线价格支持 技术支持 量大优惠 |
7N65L规格书下载地址
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- 7N65AG-TA3-T
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- 7N60M2
- 7N60-M
7N65L数据表相关新闻
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联系人：陈先生 电话：18018738768（微信同号） QQ：1005525513 我司有一手货源，价优，可以长期提供大量，优质的货源，专业的渠道，物美价廉是公司与客户之间共同的理念 由于公司型号众多，无法一一上传，如在网站找不到您要的产品，请联系业务员，本司可提供电子元器件配单服务 我司部分现货库存如下： HR911163A
2020-4-157MBP75KB060
7MBP75KB060，全新原装当天发货或门市自取0755-82732291.
2019-10-16
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