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型号 功能描述 生产厂家 企业 LOGO 操作
7N65LL

N-Channel 650V (D-S) Power MOSFET

文件:1.10557 Mbytes Page:10 Pages

VBSEMI

微碧半导体

7.4A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

UTC

友顺

7.4A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

UTC

友顺

7.4A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

UTC

友顺

N-Channel 650V (D-S) Power MOSFET

文件:1.10566 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.15815 Mbytes Page:11 Pages

VBSEMI

微碧半导体

7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

650V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

7N65LL产品属性

  • 类型

    描述

  • 型号

    7N65LL

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    7.4A, 650V N-CHANNEL POWER MOSFET

更新时间:2026-3-18 19:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBsemi
21+
TO220F
10005
一级代理,专注军工、汽车、医疗、工业、新能源、电力
-
23+
NA
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
VBsemi
24+
TO220F
5000
全新原装正品,现货销售
UTC
2450+
TO-220F1
9850
只做原装正品现货或订货假一赔十!
UTC/友顺
21+
TO-220F1
6856
百域芯优势 实单必成 可开13点增值税
UTC/友顺
20+
TO-220F1
880000
明嘉莱只做原装正品现货
VBsemi
25+
TO220F
8000
只有原装
VBsemi
25+
TO220F
9000
只做原装正品 有挂有货 假一赔十
UTC
24+
TO-220
201
全新 发货1-2天
VBsemi
24+
TO220F
8000
新到现货,只做全新原装正品

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