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71V3578价格
参考价格：￥27.1413
型号：71V3578S133PFG 品牌：IDT 备注：这里有71V3578多少钱，2026年最近7天走势，今日出价，今日竞价，71V3578批发/采购报价，71V3578行情走势销售排行榜，71V3578报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
71V3578 | 3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O The 71V3578 3.3V CMOS SRAM is organized as 256K x 18. The 71V3578 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. High system speed 150MHz (3.8ns clock access time)\nLBO input selects interleaved or linear burst mode\nSelf-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)\n3.3V core power supply\nPower down controlled by ZZ input\n3.3V I/O\nAvailable in 100 -pin TQ; | RENESAS 瑞萨 |   | |
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte | RENESAS 瑞萨 | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：220.08 Kbytes Page：18 Pages | IDT | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：220.08 Kbytes Page：18 Pages | IDT | | ||
封装/外壳：100-LQFP 包装：管件 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路（IC） 存储器 | RENESAS 瑞萨 | | ||
封装/外壳：100-LQFP 包装：卷带（TR） 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路（IC） 存储器 | RENESAS 瑞萨 | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：220.08 Kbytes Page：18 Pages | IDT | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：220.08 Kbytes Page：18 Pages | IDT | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：220.08 Kbytes Page：18 Pages | IDT | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：220.08 Kbytes Page：18 Pages | IDT | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：220.08 Kbytes Page：18 Pages | IDT | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：220.08 Kbytes Page：18 Pages | IDT | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c | IDT | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：288.96 Kbytes Page：22 Pages | IDT | | ||
3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：220.08 Kbytes Page：18 Pages | IDT | | ||
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 文件：288.96 Kbytes Page：22 Pages | IDT | |
71V3578产品属性
- 类型
描述
- 型号
71V3578
- 功能描述
静态随机存取存储器 256Kx18 SYNC 3.3V FLOW-THROUGH 静态随机存取存储器
- RoHS
否
- 制造商
Cypress Semiconductor
- 存储容量
16 Mbit
- 组织
1 M x 16
- 访问时间
55 ns
- 电源电压-最大
3.6 V
- 电源电压-最小
2.2 V
- 最大工作电流
22 uA
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 安装风格
SMD/SMT
- 封装/箱体
TSOP-48
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
NA |
7944 |
原装正品代理渠道价格优势 |
|||
26+ |
N/A |
79000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
23+ |
80 |
现货库存 |
|||||
IDT, Integrated Device Technol |
24+ |
100-TQFP(14x20) |
56200 |
一级代理/放心采购 |
|||
IDT |
26+ |
PLCC68 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
RENESAS(瑞萨)/IDT |
24+ |
TQFP-100(14x20) |
16508 |
原装正品现货支持实单 |
|||
IDT |
24+ |
QFP |
6980 |
原装现货,可开13%税票 |
|||
IDT |
2026+ |
65248 |
百分百原装现货 实单必成 |
||||
IDT |
24+ |
BGA |
350 |
||||
IDT, Integrated Device Technol |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
71V3578芯片相关品牌
71V3578规格书下载地址
71V3578参数引脚图相关
- 7号电池
- 7994
- 7805
- 7756
- 7705ac
- 74ls48
- 74ls373
- 74ls244
- 74ls192
- 74ls164
- 74ls138
- 74ls04
- 74ls00
- 74hc595
- 74hc573
- 74hc541
- 74hc244
- 74hc164
- 7490
- 7241
- 72-007
- 72-006
- 72006
- 72-005
- 72005
- 72-004
- 72004
- 72-003
- 72003
- 72002PU
- 72002NH
- 72002E
- 72-002
- 72002
- 72001PU
- 72001NH
- 72001E
- 72-001
- 72001
- 71VR1
- 71V416S12YG
- 71V416S12PHGI8
- 71V416S12PHGI
- 71V416S12PHG8
- 71V416S12PHG
- 71V416S12BEI
- 71V416S10PHGI
- 71V416S10PHG8
- 71V416S10PHG
- 71V416S10BEG
- 71V416L15PHGI
- 71V416L15PHG8
- 71V416L15PHG
- 71V416L12PHGI
- 71V416L12PHG
- 71V416L12BEI
- 71V416L10PHGI
- 71V416L10PHG
- 71V3578S133PFGI
- 71V3578S133PFG
- 71V3577S80BGI
- 71V3577S80BGGI
- 71V3577S75PFG8
- 71V3576S150PFGI
- 71V3576S133PFGI
- 71V3576S133PFG
- 71V35761SA200BG
- 71V35761S200PFG
- 71V35761S183PFGI
- 71V35761S166PFGI
- 71V35761S166BGG
- 71V3559S85BQ
- 71V3559S80BG
- 71V3559S75PFGI
- 71V3558S133PFGI
- 71V3556SA166BGI
- 71V3556SA133BGG
- 71V3556S166PFGI
- 71V3556S166PFG
- 71V321S25TF
- 71RIA
- 71RC80A
- 71RC70A
- 71RC60A
- 71RC50A
- 71RC30A
- 71RC20A
- 71RC10A
- 71RB60
- 71RB50
- 71RB160
- 71RB150
- 71RB140
- 71RB130
- 71RB110
- 71RB100
- 71RA80
- 71RA60
- 71RA50
- 71RA160
71V3578数据表相关新闻
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2024-8-15721-833/001-000
721-833/001-000
2023-4-197211MD9AV2BE
7211MD9AV2BE
2022-12-287165-0796新到货只做原装，诚信为本！
16-02-0069 87439-0300 644752-5 9-1393222-1 281839-3 16-02-0115 0527451497 1379118-1 50-36-1678 189727-1 1-1102296-1 51191-0600 640250-4 171814-1009 15-24-6180 6-103672-9 345259-1 35507-0500 15-24-9144 15-24-9164 1-350944-0 794824-1 46114-1016 770586-1 502
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https://hch01.114ic.com/
2020-11-137-215/R6C-AQ1R2B/3T原装现货
定位: Top View If - 順向電流: 20 mA 封裝: Reel 品牌: Everlight 安裝風格: SMD/SMT 濕度敏感: Yes 產品類型: LED - Standard 原廠包裝數量: 3000 子類別: LEDs
2019-11-4
DdatasheetPDF页码索引
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