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位置：首页 > IC中文资料第4949页 > 71V3578

71V3578价格

参考价格：￥27.1413

型号：71V3578S133PFG 品牌：IDT 备注：这里有71V3578多少钱，2025年最近7天走势，今日出价，今日竞价，71V3578批发/采购报价，71V3578行情走势销售排行榜，71V3578报价。
型号 功能描述 生产厂家 企业 LOGO 操作
71V3578

3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O

RENESAS

瑞萨

71V3578S

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

71V3578S133PFG

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

71V3578S133PFG8

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

71V3578S133PFGI

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

71V3578S133PFGI8

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

71V3578S150PFG

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

71V3578S150PFG8

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

71V3578S150PFGI

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

71V3578S150PFGI8

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

71V3578S133PFG

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件：220.08 Kbytes Page：18 Pages

IDT

71V3578S133PFG8

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件：220.08 Kbytes Page：18 Pages

IDT

71V3578S133PFGI

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件：220.08 Kbytes Page：18 Pages

IDT

71V3578S133PFGI

封装/外壳：100-LQFP 包装：卷带（TR） 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路（IC） 存储器

ETC

知名厂家

71V3578S133PFGI8

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件：220.08 Kbytes Page：18 Pages

IDT

71V3578S150PFG

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件：220.08 Kbytes Page：18 Pages

IDT

71V3578S150PFG

封装/外壳：100-LQFP 包装：托盘 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路（IC） 存储器

ETC

知名厂家

71V3578S150PFG8

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件：220.08 Kbytes Page：18 Pages

IDT

71V3578S150PFGI

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件：220.08 Kbytes Page：18 Pages

IDT

71V3578S150PFGI8

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件：220.08 Kbytes Page：18 Pages

IDT

IDT71V3578

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write c

IDT

IDT71V3578S

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件：288.96 Kbytes Page：22 Pages

IDT

IDT71V3578S

3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件：220.08 Kbytes Page：18 Pages

IDT

IDT71V3578SA

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件：288.96 Kbytes Page：22 Pages

IDT

71V3578产品属性

  • 类型

    描述

  • 型号

    71V3578

  • 功能描述

    静态随机存取存储器 256Kx18 SYNC 3.3V FLOW-THROUGH 静态随机存取存储器

  • RoHS

    否

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

71V3578供应商更多...

更新时间：2025-12-26 8:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市欧立现代科技有限公司
71V3578
IDT
24+
QFP
6980
原装现货,可开13%税票
询价
讯运(深圳/上海)电子有限公司
71V3578S133PFGI8
RENESAS(瑞萨)/IDT
2021+
TQFP-100(14x14)
499
询价
深圳市高捷芯城科技有限公司
71V3578S150PFGI8
RENESAS(瑞萨)/IDT
24+
TQFP100(14x14)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市科芯源微电子有限公司
71V3578S133PFG
IDT
25+
65248
百分百原装现货 实单必成
询价
深圳市赛美科科技有限公司
71V3578S133BG
IDT
BGA
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市昌和盛利电子有限公司
71V3578S133BG
IDT
NEW
PLCC68
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
标准国际(香港)有限公司
71V3578S133PFG
IDT
25+
68
公司优势库存 热卖中!
询价
深圳市冠亿通科技有限公司
71V3578S150PFG
IDT,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
深圳市一线半导体有限公司
71V3578S133BG
IDT
24+
BGA
350
询价
深圳市昊创电子有限公司
71V3578S133PFG
IDT
16+
7944
进口原装正品
询价

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