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位置：首页 > IC中文资料第4228页 > 71V3556SA100BG

型号 功能描述 生产厂家 企业 LOGO 操作
71V3556SA100BG

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

71V3556SA100BG

封装/外壳：119-BGA 包装：托盘 描述：IC SRAM 4.5MBIT PARALLEL 119PBGA 集成电路（IC） 存储器

ETC

知名厂家

71V3556SA100BG8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

71V3556SA100BGG

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

71V3556SA100BGG8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

71V3556SA100BGGI

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

71V3556SA100BGGI8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

71V3556SA100BGI

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

71V3556SA100BGI8

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

71V3556SA100BGG

封装/外壳：119-BGA 包装：托盘 描述：IC SRAM 4.5MBIT PARALLEL 119PBGA 集成电路（IC） 存储器

ETC

知名厂家

71V3556SA100BQ

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

71V3556SA100BG产品属性

  • 类型

    描述

  • 型号

    71V3556SA100BG

  • 功能描述

    静态随机存取存储器 128Kx36 SYNC 3.3V ZBT PIPELINED 静态随机存取存储器

  • RoHS

    否

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

71V3556SA100BG供应商更多...

更新时间：2026-3-7 18:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市冠亿通科技有限公司
71V3556SA100BGGI8
Renesas Electronics Corporatio
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
询价
讯运(深圳/上海)电子有限公司
71V3556SA100BGI8
RENESAS(瑞萨)/IDT
2021+
PBGA-119(14x22)
499
询价
瀚佳科技(深圳)有限公司
71V3556SA100BGGI
IDT, Integrated Device Technol
24+
119-PBGA(14x22)
56200
一级代理/放心采购
询价
艾睿（深圳）半导体有限公司
71V3556SA100BG
RENESAS(瑞萨)/IDT
2447
PBGA-119(14x22)
315000
84个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
深圳市宇创芯科技有限公司
71V3556SA100BGI8
RENESAS(瑞萨)/IDT
24+
PBGA-119(14x22)
16508
原装正品现货支持实单
询价
深圳市斌腾达科技有限公司
71V3556SA100BGGI
IDT, Integrated Device Technol
21+
90-VFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
现代芯城（深圳）科技有限公司
71V3556SA100BGI8
24+
N/A
53000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市芯为科技有限公司
71V3556SA100BGG
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
深圳市宏捷佳电子科技有限公司
71V3556SA100BGGI
Renesas Electronics America In
25+
119-BGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
深圳市科雨电子有限公司
71V3556SA100BG8
IDT
25+
BGA-119
1000
就找我吧!--邀您体验愉快问购元件!
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