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位置：首页 > IC中文资料第6318页 > 71V016SA

71V016SA价格

参考价格：￥7.4948

型号：71V016SA10PHG 品牌：IDT 备注：这里有71V016SA多少钱，2024年最近7天走势，今日出价，今日竞价，71V016SA批发/采购报价，71V016SA行情走势销售排行榜，71V016SA报价。
型号 功能描述 生产厂家&企业 LOGO 操作
71V016SA

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Description TheIDT71V016isa1,048,576-bithigh-speedStaticRAMorganizedas64Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10BF

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10BF8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10BFG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10BFG8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10BFGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10BFGI8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10PHG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10PHG8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10PHGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10PHGI8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10YG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10YG8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12BF

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12BF8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12BFG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12BFG8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12BFGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12BFGI8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12BFI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12BFI8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12PHG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12PHG8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12PHGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12PHGI8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12YG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12YG8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12YGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA12YGI8

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10BF8

封装/外壳：48-LFBGA 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 48CABGA 集成电路（IC） 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10BFG

封装/外壳：48-LFBGA 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 48FBGA 集成电路（IC） 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V016SA10BFG

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10BFG8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10BFGI

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10BFGI8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10PHG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

文件：289.06 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10PHG

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10PHG8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10PHGI

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10PHGI8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10YG

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10YG8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10YGI

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA10YGI8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12BFG

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12BFG8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12BFGI

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12BFGI8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12PHG

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12PHG8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12PHGI

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12PHGI8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12YG

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12YG8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12YGI

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA12YGI8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA15BFG

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA15BFG8

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
71V016SA15BFGI

3.3VCMOSStaticRAM

文件：116.03 Kbytes Page：9 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

71V016SA产品属性

  • 类型

    描述

  • 型号

    71V016SA

  • 制造商

    IDT

  • 制造商全称

    Integrated Device Technology

  • 功能描述

    3.3V CMOS Static RAM 1 Meg(64K x 16-Bit)

71V016SA供应商更多...

更新时间：2024-5-12 11:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
瀚佳科技(深圳)有限公司
71V016SA12YG
IDT
21+
BGA
65200
一级代理/放心采购
询价
深圳市百视威讯电子科技有限公司
71V016SA15YI
23+
N/A
49500
正品授权货源可靠
询价
深圳市中联芯电子有限公司
71V016SA12PHGI
IDT
24+
TSOP-44
9000
只做原装正品 有挂有货 假一赔十
询价
深圳市纳艾斯科技有限公司
71V016SA12PHG8
IDT
2018+
NA
6000
全新原装正品现货,假一赔佰
询价
深圳市恒意法电子有限公司
71V016SA12BF
Renesas Electronics America In
21+
48-LFBGA
4344
正规渠道/品质保证/原装正品现货
询价
贸泽芯城（深圳）电子科技有限公司
71V016SA15PHGI
IDT
22+
SSOP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
深圳市水星电子有限公司
71V016SA15YGI
Renesas
23+
44-BSOJ
2866
确保原装正品,一站式BOM配单
询价
深圳市辰德隆电子科技有限公司
71V016SA12YG
IDT
23+
BGA
6000
进口原装房间现货实库实数
询价
深圳市福安瓯科技有限公司
71V016SA15PHG
IDT
22+
SOP44
3000
强调现货,随时查询!
询价
深圳市汇莱威科技有限公司
71V016SA12PHG
IDT
TSOP-44
265209
假一罚十原包原标签常备现货!
询价

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