Radiation Tolerant Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) ○ Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs ○ Internal 4.5V regulated gate drive voltage ○ Independent outputs for adjustable turn-on/turn-

Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate

Radiation Tolerant Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) ○ Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs ○ Internal 4.5V regulated gate drive voltage ○ Independent outputs for adjustable turn-on/turn-

Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate

Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate