isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) ● Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) ● Designed for automotive application

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages