5.0A, 500V  N-CHANNEL  SUPER-JUNCTION MOSFET

The UTC 5NM50A is a Super Junction MOSFET Structure and isdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC converters for power applications. RDS(ON) < 1.08Ω @ VGS = 10 V, ID = 2.5 AFast Switching CapabilityAvalanche Energy SpecifiedImproved dv/dt Capability, High Ruggedness;

N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

N-CHANNEL 500V - 0.7ohm - 7.5A DPAK/IPAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

Automotive-grade N-channel 500 V, 0.7 Ω typ., 7.5 A, MDmesh Power MOSFET in a DPAK package

Features • AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Description This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the co