Features

• AEC-Q101 qualified

• 100 avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Description

This N-channel Power MOSFET is developed using STMicroelectronics'

revolutionary MDmesh technology, which associates the multiple drain process with

the company's PowerMESH horizontal layout. This device offers extremely low onresistance,

high dv/dt and excellent avalanche characteristics. Utilizing ST's

proprietary strip technique, this Power MOSFET boasts an overall dynamic

performance which is superior to similar products on the market.

Applications

• Switching applications