型号 功能描述 生产厂家 企业 LOGO 操作

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on)= 0.38 Ωtyp. • Low leakage current: IDSS= 1 µA max (at VDS= 200 V) • High speed switching: tf= 10 ns typ (at VGS= 10 V, VDD= 100 V, ID= 4 A) • Low gate charge: Qg = 14 nC typ (at VDD= 160 V, VGS= 10 V, ID= 8 A) • Avalanche ratings

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on)= 0.38 Ωtyp. • Low leakage current: IDSS= 1 µA max (at VDS= 200 V) • High speed switching: tf= 10 ns typ (at VGS= 10 V, VDD= 100 V, ID= 4 A) • Low gate charge: Qg = 14 nC typ (at VDD= 160 V, VGS= 10 V, ID= 8 A) • Avalanche ratings

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on)= 0.38 Ωtyp. • Low leakage current: IDSS= 1 µA max (at VDS= 200 V) • High speed switching: tf= 10 ns typ (at VGS= 10 V, VDD= 100 V, ID= 4 A) • Low gate charge: Qg = 14 nC typ (at VDD= 160 V, VGS= 10 V, ID= 8 A) • Avalanche ratings

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on)= 0.38 Ωtyp. • Low leakage current: IDSS= 1 µA max (at VDS= 200 V) • High speed switching: tf= 10 ns typ (at VGS= 10 V, VDD= 100 V, ID= 4 A) • Low gate charge: Qg = 14 nC typ (at VDD= 160 V, VGS= 10 V, ID= 8 A) • Avalanche ratings

RENESAS

瑞萨

N-Channel MOSFET uses advanced trench technology

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更新时间:2025-12-24 14:40:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
R
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
RENESAS
24+
TO-252
9000
只做原装正品 有挂有货 假一赔十
RENESAS
24+
TO-252
16900
原装正品现货支持实单
RENESAS
22+
TO-252
20000
公司只做原装 品质保障
R
23+
TO-252
8560
受权代理!全新原装现货特价热卖!
原装正品
23+
TO-251
42716
##公司主营品牌长期供应100%原装现货可含税提供技术
VBsemi
21+
TO252
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
R
22+
TO-252
6000
十年配单,只做原装
RENESAS
2023+
TO-252
8800
正品渠道现货 终端可提供BOM表配单。

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