丝印代码：5N150；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 150V,ID =4.6A RDS(ON)

丝印代码：5N150；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 150V,ID =4.6A RDS(ON)

陶瓷保险丝管（延时型）Ceramic Tube Fuse(Time-lag)UL/VDE/CCC Approved

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impeda

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impeda

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impeda

N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and

General Description

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