General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impeda

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impeda

封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 1500V 10A 50W TO220F 分立半导体产品 晶体管 - UGBT、MOSFET - 单

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impeda

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impeda

General Description

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