丝印代码：5962；ADC14155QML-SP, radiation hardened, 14-Bit, 155-MSPS, 1.1-GHz bandwidth A/D

1 Features 1• 5962R0626201VXC – Total Ionizing Dose (TID) 100 krad(Si) – Single Event Latch-up 120 MeV-cm2/mg (See Radiation Reports) • 1.1-GHz Full-Power Bandwidth • Internal Sample-and-Hold Circuit • Low-Power Consumption • Internal Precision 1-V Reference • Single-Ended or Differential

丝印代码：5962；ADC14155QML-SP, radiation hardened, 14-Bit, 155-MSPS, 1.1-GHz bandwidth A/D

1 Features 1• 5962R0626201VXC – Total Ionizing Dose (TID) 100 krad(Si) – Single Event Latch-up 120 MeV-cm2/mg (See Radiation Reports) • 1.1-GHz Full-Power Bandwidth • Internal Sample-and-Hold Circuit • Low-Power Consumption • Internal Precision 1-V Reference • Single-Ended or Differential

丝印代码：5962；LM98640QML-SP Radiation Hardness Assured (RHA), Dual Channel, 14-Bit, 40-MSPS Analog Front End With LVDS Output

1 Features 1• Radiation Hardened – TID 100 krad(Si) – Single Event Latch-Up (SEL) Immune to LET = 120 MeV-cm2/mg – Single Event Functional Interrupt (SEFI) Free to 120 MeV-cm2/mg – SMD 5962R1820301VXC • ADC Resolution: 14-Bit • ADC Sampling Rate: 5 MSPS to 40 MSPS • Input Level: 2.85 V

丝印代码：5962；LM98640QML-SP Radiation Hardness Assured (RHA), Dual Channel, 14-Bit, 40-MSPS Analog Front End With LVDS Output

1 Features 1• Radiation Hardened – TID 100 krad(Si) – Single Event Latch-Up (SEL) Immune to LET = 120 MeV-cm2/mg – Single Event Functional Interrupt (SEFI) Free to 120 MeV-cm2/mg – SMD 5962R1820301VXC • ADC Resolution: 14-Bit • ADC Sampling Rate: 5 MSPS to 40 MSPS • Input Level: 2.85 V

Tapes provide the convenience and simplicity of a tape fastener and are ideal for use in many interior and exterior bonding applications. In many situations, they can replace rivets

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丝印代码：5962-0050901QFA；SNx4LVC257A Quadruple 2-Line to 1-Line Data Selectors and Multiplexers With 3-State Outputs

1 Features • Operate from 1.65V to 3.6V • Inputs accept voltages to 5.5V • Maximum tpd of 4.6ns at 3.3V • Typical VOLP (output ground bounce) 2V at VCC = 3.3V, TA = 25°C • Latch-up performance exceeds 250mA per JESD 17

丝印代码：5962-0051001QXA；SMJ320C6203 Fixed-Point Digital Signal Processor

1 Features 1• High-Performance Fixed-Point Digital Signal Processor (DSP) SMJ320C62x™ – 5-ns Instruction Cycle Time – 200-MHz Clock Rate – Eight 32-Bit Instructions/Cycle – 1600 Million Instructions per Second (MIPS) • 429-Pin Ball Grid Array (BGA) Package (GLP Suffix) • VelociTI™ Advance

丝印代码：5962-0051301QCA；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

丝印代码：5962-0052102VFA；COMPLIMENTARY SWITCH FET DRIVERS

1FEATURES • Single Input (PWM and TTL Compatible) • High Current Power FET Driver, 1-A Source/2-A Sink • Auxiliary Output FET Driver, 0.5-A Source/1-A Sink • Time Delays Between Power and Auxiliary Outputs Independently Programmable from 50 ns to 700 ns • Time Delay or True Zero-Voltage O

丝印代码：5962-0052102VFA；COMPLIMENTARY SWITCH FET DRIVERS

1FEATURES • Single Input (PWM and TTL Compatible) • High Current Power FET Driver, 1-A Source/2-A Sink • Auxiliary Output FET Driver, 0.5-A Source/1-A Sink • Time Delays Between Power and Auxiliary Outputs Independently Programmable from 50 ns to 700 ns • Time Delay or True Zero-Voltage O

丝印代码：5962-0053901QYA；SMx320VC33 Digital Signal Processor

1 Features • High-Performance Floating-Point Digital Signal Processor (DSP) – SMx320VC33-150 – 13-ns Instruction Cycle Time – 150 Million Floating-Point Operations per Second (MFLOPS) – 75 Million Instructions per Second (MIPS) • 34K × 32-Bit (1.1-Mbit) On-Chip Words of Dual- Access Stati

丝印代码：5962-0053901QYC；SMx320VC33 Digital Signal Processor

1 Features • High-Performance Floating-Point Digital Signal Processor (DSP) – SMx320VC33-150 – 13-ns Instruction Cycle Time – 150 Million Floating-Point Operations per Second (MFLOPS) – 75 Million Instructions per Second (MIPS) • 34K × 32-Bit (1.1-Mbit) On-Chip Words of Dual- Access Stati

丝印代码：5962-0053901QYC；SMx320VC33 Digital Signal Processor

1 Features • High-Performance Floating-Point Digital Signal Processor (DSP) – SMx320VC33-150 – 13-ns Instruction Cycle Time – 150 Million Floating-Point Operations per Second (MFLOPS) – 75 Million Instructions per Second (MIPS) • 34K × 32-Bit (1.1-Mbit) On-Chip Words of Dual- Access Stati

丝印代码：5962-0522101VXC；TLK2711-SP 1.6Gbps to 2.5Gbps Class V Transceiver

1 Features • 1.6Gbps to 2.5Gbps (Gigabits per second) serializer/deserializer • Hot-plug protection • High-performance 68-pin ceramic quad flat pack package (HFG) • Low-power operation • Programmable preemphasis levels on serial output • Interfaces to backplane, copper cables, or optical

丝印代码：5962-0522101VXC；TLK2711-SP 1.6Gbps to 2.5Gbps Class V Transceiver

1 Features • 1.6Gbps to 2.5Gbps (Gigabits per second) serializer/deserializer • Hot-plug protection • High-performance 68-pin ceramic quad flat pack package (HFG) • Low-power operation • Programmable preemphasis levels on serial output • Interfaces to backplane, copper cables, or optical

丝印代码：5962-0623501QPC；500MHz Rail-to-Rail Amplifiers

Features • 500MHz -3dB bandwidth • 600V/μs slew rate • Low supply current = 11mA • Supplies from 3V to 5.0V • Rail-to-rail output • Input to 0.15V below VS- • Fast 25ns disable (5962-0623501QPC only) Applications • Video amplifiers • Portable/hand-held products • Communications devices

丝印代码：5962-0623502QPC；500MHz Rail-to-Rail Amplifiers

Features • 500MHz -3dB bandwidth • 600V/μs slew rate • Low supply current = 11mA • Supplies from 3V to 5.0V • Rail-to-rail output • Input to 0.15V below VS- • Fast 25ns disable (5962-0623501QPC only) Applications • Video amplifiers • Portable/hand-held products • Communications devices

丝印代码：5962-0720401VXC；DAC5675A-SP Radiation-Tolerant, 14-Bit, 400-MSPS Digital-to-Analog Converter

1 Features 1• QMLV (QML Class V) MIL-PRF-38535 Qualified, SMD 5962-07204 – 5962-0720401VXC – Qualified over the Military Temperature Range (–55°C to 125°C) – 5962-0720402VXC – Qualified over Reduced Temperature Range (–55°C to 115°C) for Improved Dynamic Performance • High-Performance 52-P

丝印代码：5962-0720402VXC；DAC5675A-SP Radiation-Tolerant, 14-Bit, 400-MSPS Digital-to-Analog Converter

1 Features 1• QMLV (QML Class V) MIL-PRF-38535 Qualified, SMD 5962-07204 – 5962-0720401VXC – Qualified over the Military Temperature Range (–55°C to 125°C) – 5962-0720402VXC – Qualified over Reduced Temperature Range (–55°C to 115°C) for Improved Dynamic Performance • High-Performance 52-P

丝印代码：5962-0722301VFA；RAD-TOLERANT CLASS V, WIDEBAND, FULLY DIFFERENTIAL AMPLIFIER

1FEATURES · Fully Differential Architecture · Centered Input Common-Mode Range · Minimum Gain of 2V/V (6 dB) · Bandwidth: 1100 MHz (Gain = 6 dB) · Slew Rate: 5100 V/μs · 1% Settling Time: 5.5 ns · HD 2: –76 dBc at 70 MHz · HD3: –88 dBc at 70 MHz · OIP2: 84 dBm at 70 MHz · OIP3: 42 dB

丝印代码：5962-0723001VXC；CDCM7005-SP 3.3-V High Performance Rad-Tolerant Class V, Clock Synchronizer and Jitter Cleaner

1 Features 1• High Performance LVPECL and LVCMOS PLL Clock Synchronizer • Two Reference Clock Inputs (Primary and Secondary Clock) for Redundancy Support With Manual or Automatic Selection • Accepts LVCMOS Input Frequencies Up to 200 MHz • VCXO_IN Clock is Synchronized to One of the Two R

丝印代码：5962-0724801VFA；HIGH-SPEED DIFFERENTIAL RECEIVER

1FEATURES • 400-Mbps Signaling Rate and 200-Mxfr/s Data Transfer Rate (1) • Operates With a Single 3.3-V Supply • –4 V to 5 V Common-Mode Input Voltage Range • Differential Input Thresholds

丝印代码：5962-1022101VSC；TPS50601-SP Radiation Hardened 1.6- to 6.3-V Input, 6-A Synchronous Buck Converter

1 Features 1• 5962R10221: – Radiation Hardness Assurance (RHA) up to TID 100 krad (Si) – ELDRS Free 100 krad (Si) – 10 mRAD(Si)/s – Single Event Latchup (SEL) Immune to LET = 85 MeV-cm2/mg (See Radiation Report) – SEB and SEGR Immune to 85 MeV-cm2/mg, SOA Curve Available (See Radiation Rep

丝印代码：5962-1022102VSC；TPS50601A-SP Radiation Hardened 3-V to 7-V Input, 6-A Synchronous Buck Converter

1 Features 1• 5962-10221: – Radiation hardened up to TID 100 krad(Si) – ELDRS free 100 krad(Si) – 10 mrad(Si)/s – Single lhup (SEL) Immune to LET = 75 MeV-cm2/mg – SEB and SEGR immune to 75 MeV-cm2/mg, SOA Curve Available – SET/SEFI Cross-section plot available • peak efficiency: 96.6%

丝印代码：5962-1022102VS；TPS50601A-SP Radiation Hardened 3-V to 7-V Input, 6-A Synchronous Buck Converter

1 Features 1• 5962-10221: – Radiation hardened up to TID 100 krad(Si) – ELDRS free 100 krad(Si) – 10 mrad(Si)/s – Single lhup (SEL) Immune to LET = 75 MeV-cm2/mg – SEB and SEGR immune to 75 MeV-cm2/mg, SOA Curve Available – SET/SEFI Cross-section plot available • peak efficiency: 96.6 (VO

丝印代码：5962-1124201QFA；SN55LVCP22 QML Class Q 2×2 1-Gbps LVDS Crosspoint Switch

1 Features • QML class Q, SMD 5962-11242 • High-speed (up to 1000 Mbps) • Low-jitter fully differential data path • 50 ps (typ), of peak-to-peak jitter with PRBS = 223–1 pattern • Less than 227 mW (typ), 313 mW (max) total power dissipation • Output (channel-to-channel) skew is 80 ps (typ)

丝印代码：5962-1124201VFA；CLASS V 2x2 LVDS CROSSPOINT SWITCH

1FEATURES • High Speed (>1000 Mbps) Upgrade for DS90CP22 2x2 LVDS Crosspoint Switch • Low-Jitter Fully Differential Data Path • 50 ps (Typ), of Peak-to-Peak Jitter With PRBS = 223–1 Pattern • Less Than 200 mW (Typ), 300 mW (Max) Total Power Dissipation • Output (Channel-to-Channel) Skew Is

丝印代码：5962-1320201VXC；TPS7H1101-SP 1.5-V to 7-V Input, 3-A, Radiation-Hardened Ultra-Low Dropout (LDO) Regulator

1 Features 1• 5962R13202: – Radiation Hardness Assurance (RHA) up to TID 100 krad (Si) – Total Ionizing Dose 100 krad (Si) – ELDRS-Free 100 krad (Si) – Dose Rate 10 mRAD (si)/s – Single Event Latchup (SEL) Immune to LET = 85 MeV-cm2/mg – SEB and SEGR Immune to LET = 85 MeV-cm2/mg – SET/

丝印代码：5962-1422801VXC；TPS7H3301-SP Sink and Source Radiation-Hardened 3-A DDR Termination Regulator With Built-In VTTREF Buffer

1 Features • 5962R14228 (1): – Radiation hardness assurance (RHA) qualified to total ionizing dose (TID) 100 krad(Si) – Single event latch-up (SEL), single event gate rupture (SEGR), single event burnout (SEB) immune to LET = 70 MeV-cm2/mg(2) – Single event transient (SET), single event fu

丝印代码：5962-1620701VXC；CDCLVP111-SP Low-Voltage 1:10 LVPECL With Selectable Input Clock Driver

1 Features • Distributes One Differential Clock Input Pair LVPECL to 10 Differential LVPECL • Fully Compatible With LVECL and LVPECL • Supports a Wide Supply Voltage Range From 2.375V to 3.8V • Selectable Clock Input Through CLK_SEL • Low-Output Skew (Typical 15ps) for Clock- Distribution

丝印代码：5962-1620901VYC；OPA4277-SP Radiation-Hardened, High-Precision Operational Amplifier

1 Features • QMLV qualified: 5962-16209 – Radiation hardness assurance (RHA) up to total ionizing dose (TID) 50krad(Si) – ELDRS-Free (See Radiation Report) – Single event latch-up (SEL) Immune to LET = 85MeV-cm2/mg • Ultra-low offset voltage: 20μV (typical) • Ultra-low drift: ±0.15μV/°C (t

丝印代码：5962-1721801VXC；TMP461-SP Radiation-Hardness-Assured (RHA), High-Accuracy Remote and Local Temperature Sensor

1 Features 1• QMLV Qualified: 5962R-1721801VXC – Thermally Enhanced HKU Package – Radiation-Hardness-Assured (RHA) up to Total Ionizing Dose (TID) 100 krad(Si) at low dose rate (LDR) of 10 mrad/s – Single Event Latchup (SEL) Immune to 76 MeV·cm2/mg at 125°C – 10-Lead HKU Ceramic Package •

丝印代码：5962-1721801VXC；TMP461-SP Radiation-Hardness-Assured (RHA), High-Accuracy Remote and Local Temperature Sensor

1 Features 1• QMLV Qualified: 5962R-1721801VXC – Thermally Enhanced HKU Package – Radiation-Hardness-Assured (RHA) up to Total Ionizing Dose (TID) 100 krad(Si) at low dose rate (LDR) of 10 mrad/s – Single Event Latchup (SEL) Immune to 76 MeV·cm2/mg at 125°C – 10-Lead HKU Ceramic Package •

丝印代码：5962-1722001VXC；TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

丝印代码：5962-1722001VXC；TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

丝印代码：5962-1722001VXC；TPS7H2201-SP Radiation Hardened 1.5-V to 7-V, 6-A Load Switch

1 Features 1• Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg – SEFI/SET characterized to LET = 75 MeV-cm2/mg • Integrated single

丝印代码：5962-1722001VXC；TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR)

丝印代码：5962-1820501VXC；TPS7H4001-SP Radiation-Hardness-Assured 3-V to 7-V Input 18-A Synchronous Buck Converter

1 Features • Radiation performance: – Radiation-hardness-assured up to TID 100 krad(Si) – SEL, SEB, and SEGR immune to LET = 75 MeV-cm2/mg – SET and SEFI characterized up to LET = 75 MeV-cm2/mg • Peak efficiency: 95.5 (VO = 1 V at 100 kHz) • Integrated 22-mΩ and 17-mΩ MOSFETs • Power rai

丝印代码：5962-1820501VXC；TPS7H4001-SP Radiation-Hardness-Assured 3-V to 7-V Input 18-A Synchronous Buck Converter

1 Features • Radiation performance: – Radiation-hardness-assured up to TID 100 krad(Si) – SEL, SEB, and SEGR immune to LET = 75 MeV-cm2/mg – SET and SEFI characterized up to LET = 75 MeV-cm2/mg • Peak efficiency: 95.5 (VO = 1 V at 100 kHz) • Power rail: 3 V to 7 V on VIN • Flexible switc

丝印代码：5962-1820501VXC；TPS7H4001-SP Radiation-Hardness-Assured 3-V to 7-V Input 18-A Synchronous Buck Converter

1 Features • Radiation performance: – Radiation-hardness-assured up to TID 100 krad(Si) – SEL, SEB, and SEGR immune to LET = 75 MeV-cm2/mg – SET and SEFI characterized up to LET = 75 MeV-cm2/mg • Peak efficiency: 95.5% (VO = 1 V at 100 kHz) • Power rail: 3 V to 7 V on VIN • Flexible

丝印代码：5962-1822001VXC；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

丝印代码：5962-1822001VXC；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

丝印代码：5962-1822001VXC；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse

1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t

丝印代码：5962-1822001VXC；TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

丝印代码：5962-7604301VEA；4-BIT BINARY FULL ADDERS WITH FAST CARRY

Full-Carry Look-Ahead Across the Four Bits Systems Achieve Partial Look-Ahead Performance with the Economy of Ripple Carry Supply Voltage and Ground on Corner Pins to Simplify P-C Board Layout description The *283 and 'LS283 adders are electrically and functionally identical to the

丝印代码：5962-7604301VEA；4-BIT BINARY FULL ADDERS WITH FAST CARRY

Full-Carry Look-Ahead Across the Four Bits Systems Achieve Partial Look-Ahead Performance with the Economy of Ripple Carry Supply Voltage and Ground on Corner Pins to Simplify P-C Board Layout description The *283 and 'LS283 adders are electrically and functionally identical to the

丝印代码：5962-7700801VCA；QUAD DIFFERENTIAL COMPARATOR

1FEATURES • QML-V Qualified, SMD 5962-7700801VCA, 5962-9673802VCA and 5962-9673802V9B • Rad-Tolerant: 40 kRad/sec (Si) TID (5962-9673802VCA and 5962-9673802V9B) (1) – TID Dose Rate = 0.01 rad/sec (Si) • Wide Supply Ranges – Single Supply: 2 V to 36 V (Tested to 30 V) – Dual Supplies: ±1 V

丝印代码：5962-7704301VCA；LMx24, LMx24x, LMx24xx, LM2902, LM2902x, LM2902xx, LM2902xxx Quadruple Operational Amplifiers

1 Features • Next-generation LM324B and LM2902B • B versions are drop-in replacements for all versions of LM224, LM324, and LM2902 • Improved specifications of B version – Supply range: 3V to 36V (B, BA versions) – Low input offset voltage: ±2mV (BA version) / 3mV (B version) – ESD rating:

丝印代码：5962-7704301VC；LMx24, LMx24x, LMx24xx, LM2902, LM2902x, LM2902xx, LM2902xxx Quadruple Operational Amplifiers

1 Features • New LM324B and LM2902B • B versions are drop-in replacements for all versions of LM224, LM324, and LM2902 • Improved specifications of B version – Supply range: 3 V to 36 V (B, BA versions) – Low input offset voltage: ±2 mV (BA version) / 3 mV (B version) – ESD rating: 2 kV (H

丝印代码：5962-7704301VC；LMx24, LMx24x, LMx24xx, LM2902, LM2902x, LM2902xx, LM2902xxx Quadruple Operational Amplifiers

1 Features • New LM324B and LM2902B • B versions are drop-in replacements for all versions of LM224, LM324, and LM2902 • Improved specifications of B version – Supply range: 3 V to 36 V (B, BA versions) – Low input offset voltage: ±2 mV (BA version) / 3 mV (B version) – ESD rating: 2 kV (H

丝印代码：5962-7704301VCA；Quadruple Operational Amplifiers

1 Features • New LM324B and LM2902B • B versions are drop-in replacements for all versions of LM224, LM324, and LM2902 • Improved specifications of B version – Supply range: 3 V to 36 V (B, BA versions) – Low input offset voltage: ±2 mV (BA version) / 3 mV (B version) – ESD rating: 2 kV (H

丝印代码：5962-7704301VC；LMx24, LMx24x, LMx24xx, LM2902, LM2902x, LM2902xx, LM2902xxx Quadruple Operational Amplifiers

1 Features • Wide supply range: – 3 V to 36 V (B, BA versions) – 3 V to 30 V (LMx24, LM2902V) • Low input offset voltage maximum at 25°C: – 2 mV (BA versions LM2902A, LM124A) – 3 mV (B versions LMx24xA) • Low input bias current maximum at 25°C: – 35 nA (B, BA versions) • 2-kV ESD protecti

丝印代码：5962-7704301VCA；QUADRUPLE OPERATIONAL AMPLIFIER

1FEATURES • QML-V Qualified, SMD 5962-7704301VCA, 5962-9950403VCA and 5962-9950403V9B • Rad-Tolerant: 50 kRad (Si) TID (5962-9950403VCA and 5962-9950403V9B) (1) – TID Dose Rate = 0.01 rad/sec (Si) • Wide Supply Ranges – Single Supply: 3 V to 32 V – Dual Supplies: ±1.5 V to ±16 V • Low Sup

丝印代码：5962-7801201VSA；SNx4LS24x, SNx4S24x Octal Buffers and Line Drivers With 3-State Outputs

1 Features 1• Inputs Tolerant Down to 2 V, Compatible With 3.3-V or 2.5-V Logic Inputs • Maximum tpd of 15 ns at 5 V • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers • PNP Inputs Reduce DC Loading • Hysteresis at Inputs Improves Noise Margins 2 Applications • Servers

丝印代码：5962-7801201VS；SNx4LS24x, SNx4S24x Octal Buffers and Line Drivers With 3-State Outputs

1 Features 1• Inputs Tolerant Down to 2 V, Compatible With 3.3-V or 2.5-V Logic Inputs • Maximum tpd of 15 ns at 5 V • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers • PNP Inputs Reduce DC Loading • Hysteresis at Inputs Improves Noise Margins 2 Applications • Servers

丝印代码：5962-7802003M2A；AM26LS32Ax, AM26LS33Ax Quadruple Differential Line Receivers

1 Features • AM26LS32A Devices meet or exceed the requirements of ANSI TIA/EIA-422-B, TIA/ EIA-423-B, and ITU recommendations V.10 and V.11 • AM26LS32A Devices have ±7-V Common-mode range with ±200-mV sensitivity • AM26LS33A Devices have ±15-V common-mode range with ±500-mV sensitivity •

丝印代码：5962-7802003MEA；AM26LS32Ax, AM26LS33Ax Quadruple Differential Line Receivers

1 Features • AM26LS32A Devices meet or exceed the requirements of ANSI TIA/EIA-422-B, TIA/ EIA-423-B, and ITU recommendations V.10 and V.11 • AM26LS32A Devices have ±7-V Common-mode range with ±200-mV sensitivity • AM26LS33A Devices have ±15-V common-mode range with ±500-mV sensitivity •

丝印代码：5962-7802003MFA；AM26LS32Ax, AM26LS33Ax Quadruple Differential Line Receivers

1 Features • AM26LS32A Devices meet or exceed the requirements of ANSI TIA/EIA-422-B, TIA/ EIA-423-B, and ITU recommendations V.10 and V.11 • AM26LS32A Devices have ±7-V Common-mode range with ±200-mV sensitivity • AM26LS33A Devices have ±15-V common-mode range with ±500-mV sensitivity •

丝印代码：5962-7802004M2A；AM26LS32Ax, AM26LS33Ax Quadruple Differential Line Receivers

1 Features • AM26LS32A Devices meet or exceed the requirements of ANSI TIA/EIA-422-B, TIA/ EIA-423-B, and ITU recommendations V.10 and V.11 • AM26LS32A Devices have ±7-V Common-mode range with ±200-mV sensitivity • AM26LS33A Devices have ±15-V common-mode range with ±500-mV sensitivity •

丝印代码：5962-7802004MEA；AM26LS32Ax, AM26LS33Ax Quadruple Differential Line Receivers

1 Features • AM26LS32A Devices meet or exceed the requirements of ANSI TIA/EIA-422-B, TIA/ EIA-423-B, and ITU recommendations V.10 and V.11 • AM26LS32A Devices have ±7-V Common-mode range with ±200-mV sensitivity • AM26LS33A Devices have ±15-V common-mode range with ±500-mV sensitivity •