RADIAFLEX

DESCRIPTION · Metalwork : Mild steel, plated. · Natural rubber, bonded, cylindrically shaped. · Welded fixings: 5 styles (single sided threaded stud, single sided threaded hole, double threaded stud, double threaded holes, combination fixing). In Europe, we often use different screw standards

包装：散装 描述：.125 BLADE 3 CIR PLUG HSG V-0 连接器，互连器件 矩形连接器外壳

包装：袋 描述：INCAND PANEL INDICATOR 14V 光电器件 面板指示器，指示灯

连接器外壳

Round cylinder

文件：86.57 Kbytes Page：1 Pages

Round cylinder

文件：86.75 Kbytes Page：1 Pages

Round cylinder

文件：86.58 Kbytes Page：1 Pages

Round cylinder

文件：86.75 Kbytes Page：1 Pages

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

FEATURES • HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • OIP3 = 15 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • 4 PIN SUPER MINI MOLD PACKAGE • GROUNDED EMITT

GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) · 4-pin super minimold

L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

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