| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS TMOS E-FET Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS) N–Channel Enhancement–Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
TO-220 |
15500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MOTOROLA/摩托罗拉 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON/安森美 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
N/A |
25+ |
TO220 |
12940 |
只做原装正品假一赔十可含税 |
|||
24+ |
1100 |
真实现货库存 |
|||||
MOT |
23+24 |
TO-220 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
MOTOROLA |
24+ |
TO-220 |
65300 |
一级代理/放心购买! |
|||
N/A |
25+ |
TO220 |
2035 |
||||
MOT |
22+ |
TO-220 |
20000 |
公司只做原装 品质保障 |
|||
MOTOROLA/摩托罗拉 |
00+ |
TO-220 |
122 |
50N06D芯片相关品牌
50N06D规格书下载地址
50N06D参数引脚图相关
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- 555多谐振荡器
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- 555电路
- 555
- 54286
- 5386
- 5369
- 51单片机
- 50P-076
- 50P06
- 50P04
- 50P03L
- 50P-034
- 50P-033
- 50P03
- 50NZ02
- 50NHM0B
- 50NHG0B
- 50NH1M
- 50NH0M
- 50N60
- 50N324
- 50N30
- 50N20
- 50N06L-TA3-T
- 50N06LT
- 50N06L-F
- 50N06L-C-TF3-T
- 50N06L-C-TA3-T
- 50N06L-B-TA3-T
- 50N06L-A-TF3-T
- 50N06L-A-TA3-T
- 50N06L(6FL1250)
- 50N06L
- 50N06H
- 50N06G-TQ2-T
- 50N06G-TQ2-R
- 50N06G-TN3-T
- 50N06G-TN3-R
- 50N06G-TM3-T
- 50N06G-TF3-T
- 50N06G-TA3-T
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- 50N06FI
- 50N06-F
- 50N06F
- 50N06EL
- 50N06CSU
- 50N06CMP50N06
- 50N06B
- 50N06A
- 50N065
- 50N06-09L
- 50N06-09
- 50N06_11
- 50N06/KIA50N06
- 50N06/80N06/30N06
- 50N06/60N06/70N06
- 50N06/60N06
- 50N06/30N10/15N10/19N10
- 50N06/30N06/20N06/80N06
- 50N06/30N06/20N06/50N/03/30N03/15N10
- 50N06/30N06/20N06/50N/03/30N03
- 50N06/20N06/30N06
- 50N06
- 50N05E
- 50N05/50N06
- 50N05
- 50N04L-TN3-R
- 50N03RG
- 50N035T
- 50N035S
- 50N035
- 50N03
- 50N024
- 50MLC20
- 50ML20
- 50LR85
- 50LET
- 50L6-GT
- 50L6GT
- 50L12C
- 50L10C
- 50L08C
- 50L05C
- 50L02J
50N06D数据表相关新闻
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2019-3-1
DdatasheetPDF页码索引
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