N-channel power MOS tube

Features * VDS (V)=650V * RDS(ON) ≤ 2.7 (VGS = 10V) * ID=4.0A

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N-CHANNEL POWER MOSFET

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4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

650V N-Channel MOSFET

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 15 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V ❐

N-channel MOSFET (TO-251 , TO-252)

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N-channel MOSFET (TO-220F , TO-220)

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N-Channel Power MOSFET 3.9A, 650V, 3.0廓

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