型号 功能描述 生产厂家&企业 LOGO 操作
4N65L

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

UTC

友顺

4N65L

N-channel power MOS tube

Features * VDS (V)=650V * RDS(ON) ≤ 2.7 (VGS = 10V) * ID=4.0A

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

UTC

友顺

Power MOSFET

文件:1.07616 Mbytes Page:9 Pages

VBSEMI

微碧半导体

650V N-Channel Power MOSFET

文件:2.82624 Mbytes Page:10 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

Drain Current ID= 4A@ TC=25C

文件:136.78 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL POWER MOSFET

文件:607.6 Kbytes Page:7 Pages

ZSELEC

淄博圣诺电子

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

UTC

友顺

4A, 650V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N65-TC1 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

UTC

友顺

4A, 650V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N65-TC1 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

UTC

友顺

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

UTC

友顺

N-CHANNEL POWER MOSFET

文件:253.12 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:368.33 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:246.28 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:374.43 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:246.28 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:253.12 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:368.33 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:374.43 Kbytes Page:9 Pages

UTC

友顺

N-Channel 650 V (D-S) MOSFET

文件:1.08662 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:368.33 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:211.71 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:246.28 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:253.12 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:217.97 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:374.43 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:368.33 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:374.43 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:253.12 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:246.28 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:246.28 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:368.33 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:374.43 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:253.12 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:368.33 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:253.12 Kbytes Page:7 Pages

UTC

友顺

N-Channel 650V (D-S) Power MOSFET

文件:1.07814 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL POWER MOSFET

文件:253.12 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:374.43 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:246.28 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:368.33 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:368.33 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:374.43 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:246.28 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:253.12 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:246.28 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:374.43 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:253.12 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:368.33 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:246.28 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:368.33 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:374.43 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:253.12 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:374.43 Kbytes Page:9 Pages

UTC

友顺

4N65L产品属性

  • 类型

    描述

  • 型号

    4N65L

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    4 Amps, 650 Volts N-CHANNEL POWER MOSFET

更新时间:2025-8-6 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC/友顺
24+
NA/
5750
原装现货,当天可交货,原型号开票
UTC/友顺
25+
TO-220F1
32360
UTC/友顺全新特价4N65L-TF1-T即刻询购立享优惠#长期有货
士兰微
24+
TO-220F
880000
明嘉莱只做原装正品现货
UTC
21+
TO-251
20000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UMW(广东友台半导体)
24+
TO-252
5000
诚信服务,绝对原装原盘。
UTC/友顺
24+
TO-252
502781
免费送样原盒原包现货一手渠道联系
UTC/友顺
23+
TO-220F
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
UTC(友顺)
24+/25+
TO-251S
75
UTC原厂一级代理商,价格优势!
UTC
25+23+
TO-220F
37820
绝对原装正品现货,全新深圳原装进口现货
UTC
25+
TO-TO-220F
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证

4N65L数据表相关新闻